| MCT与Clustered IGBT在大功率应用中的比较研究 |
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| 引用本文： | 彭朝飞,陈万军,孙瑞泽,阮建新,张波. MCT与Clustered IGBT在大功率应用中的比较研究[J]. 电子与封装, 2014, 0(6): 32-36 |
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| 作者姓名： | 彭朝飞 陈万军 孙瑞泽 阮建新 张波 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 |
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| 基金项目： | 国家科技重大专项02专项（No.2011ZX02706.003）;预研项目（51308030407） |
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| 摘 要： | 针对两种应用于大功率领域的半导体器件——栅控晶闸管(MCT)和组合式绝缘栅晶体管(CIGBT),采用数值仿真软件进行了比较研究。静态仿真结果表明MCT具有更低的正向压降,只有CIGBT的50%左右,而CIGBT得益于其电流饱和特性,具有更大的短路安全工作区。开关仿真结果表明CIGBT具有比MCT更短的关断时间和更小的关断能量,更适合应用于高频领域。同时研究了MCT和CIGBT在脉冲放电应用中的特性,结果表明MCT具有更大的脉冲峰值电流和更快的电流上升率,并首次论证了脉冲放电过程中器件物理机制的区别。
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| 关 键 词： | 组合式绝缘栅晶体管 栅控晶闸管 大功率应用 脉冲放电 |
Comparison of MCT and Clustered IGBT in High Power Applications |
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| PENG Zhaofei,CHEN Wanjun,SUN Ruize,RUAN Jianxin,ZHANG Bo. Comparison of MCT and Clustered IGBT in High Power Applications[J]. Electronics & Packaging, 2014, 0(6): 32-36 |
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| Authors: | PENG Zhaofei CHEN Wanjun SUN Ruize RUAN Jianxin ZHANG Bo |
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| Affiliation: | (State Key Laboratory of Electronic Thin Film and Integrated Devices, UESTC, Chengdu 610054, China) |
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| Abstract: | Two semiconductor devices which are used in high power applications are investigated by numerical simulation tool in the paper. The static simulation results indicate that the saturation voltage of MOS controlled thyristor （MCT） is only half of the clustered IGBT （C1GBT）. However, CIGBT has larger short circuit safe operation area （SCSOA） because of the current saturation characteristic. The inductive load switching simulation results indicate CIGBT has shorter turn-off time and lower tttm-off energy, which makes it more superior in high frequency applications. Meanwhile, the pulsed discharge performance is also investigated. The simulation results indicate MCT has higher peak current value and current change rate. The physical operation mechanism is analysed to explain the performance difference. |
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| Keywords: | clustered IGBT MCT high power pulsed discharge |
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