| 单芯片大功率RFLDMOS晶体管设计与实验 |
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| 引用本文： | 刘武平,周星,韩鹏宇,邓小川. 单芯片大功率RFLDMOS晶体管设计与实验[J]. 电子与封装, 2014, 0(2): 42-44 |
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| 作者姓名： | 刘武平 周星 韩鹏宇 邓小川 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都610054 |
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| 基金项目： | 感谢上海华虹宏力半导体制造有限公司为本次流片提供了工艺指导,同时感谢中国电子科技集团公司第13研究所为本次实验提供功率测试指导. |
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| 摘 要： | 传统射频LDMOS晶体管的源区采用重掺杂p+sinker结构,该结构会占据较大的芯片面积。文中采用槽型sinker结构,可将源区sinker面积减少1/3以上。通过流片实验,得到饱和电流为170 mA/mm、击穿电压120 V、截止频率和最大振荡频率分别为5.5 GHz和10 GHz的RF LDMOS器件。在50 V工作电压、1 090 MHz频点下栅宽345 mm单芯片器件的最大输出功率362 W,功率增益15.6 dB,漏极效率38.1%。
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| 关 键 词： | RF LDMOS 槽型sinker 击穿电压 功率增益 漏极效率 |
Design and Experiment of Single High Power RF LDMOS Device |
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| LIU Wuping,ZHOU Xing,HAN Pengyu,DENG Xiaochuan. Design and Experiment of Single High Power RF LDMOS Device[J]. Electronics & Packaging, 2014, 0(2): 42-44 |
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| Authors: | LIU Wuping ZHOU Xing HAN Pengyu DENG Xiaochuan |
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| Affiliation: | ( University of Electronic Science and Technology of China, Chengdu 610054, China) |
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| Abstract: | In conventional RF LDMOS structure the source region is formed by high dose p＋ sinker, which much of the chip area would be consumed by. In this paper, we use trench type sinker structure can reduce the sinker area more than one-third. By tapeout experiment, a RF LDMOS device with 170 mA/mm Saturation current, 120 V breakdown voltage, 5.5 GHz cut-off frequency and 10 GHz max oscillator frequency was achieved; The single device of 345 mm poly width working at 50 V voltage and 1 090 MHz frequency can provide 362 W peak power with 15.6 dB power gain and 38.1% drain efficiency. |
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| Keywords: | RF LDMOS trench sinker breakdown voltage power gain drain efficiency |
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