非制冷型中长波铟砷锑探测器

工作在中、长波红外波段(波长5~12μm)的红外探测器在红外制导、红外成像、环境监测及资源探测等方面有着重要而广阔的应用前景。目前中国军用和民用对这一波段的非制冷型、快速响应的光子型红外探测器有迫切需求。文中用熔体外延(ME)法在InAs(砷化铟)衬底上生长的InAs0.05Sb0.95(铟砷锑)厚膜单晶,制作了高灵敏度、非制冷型、中长波光导型探测器,探测器上安装了Ge(锗)浸没透镜。傅里叶变换红外(FTIR)吸收光谱显示InAsSb材料的本征吸收边出现在波长8μm以后。InAs0.05Sb0.95探测器的光谱响应波长范围为2~9μm。室温下,在波长6.5μm处的峰值探测率Dλp*达到5.4×109 cm·Hz1/2·W-1,在波长8.0μm和9.0μm处的探测率D*分别为9.3×108和1.3×108 cm·Hz1/2·W-1,显示了InAsSb探测器的优越性能及对红外探测和成像的应用前景。

Uncooled Mid and Long-wave Infrared InAsSb Photoconductors

Infrared （IR） detectors operating in mid and long-wave infrared （5-12μ m wavelength region） have important and wide applications for IR guide and imaging, environmental monitoring and natural resource detection. Currently, uncooled infrared photodetectors with fast responding velocity operating in this waveband are in urgent demand for military and civil use in China. High sensitivity uncooled mid and long-wave IR InAsSb photoconductors were experimentally validated in this paper. The photoconductors were fabricated using InAs0.05Sb0.95 thick epilayers grown on InAs substrates by melt epitaxy （ME） method. Ge optical immersion lenses were set on the photoconductors. Fourier transform infrared （FTIR） absorption spectra showed that the intrinsic absorption edges of InAsSb materials appear beyond the wavelength of 8 ~rn. The photoresponse wavelength range of InAs0.0sSb0.95 detectors was 2-9 ~tm. At room temperature, the peak detectivity D~p＊ reached 5.4 x 109 cm-Hzl/2-W-I at the wavelength of 6.5 pm for the immersed detectors. The detectivity D＊ was 9.3 ×10^8 and 1.3 × 10^8 cm＇Hz^1/2W^-1 at the wavelength of 8 and 9 μm respectively, indicating the excellent performance of InAsSb photoconductors and possible applications for infrared （IR） detection and imaging.