Intensification of electroluminescence of ZnSe:(Te,O) crystals as a result of irradiation with γ-ray photons

The effects of irradiation with γ-ray photons of the ⁶⁰Co isotope and of treatment in zinc vapors on the electroluminescence of ZnSe:(Te, O) crystals were studied with the aim of revealing the potential for fabrication of light-emitting structures. The broadband electroluminescence with a peak at 600 nm is excited in the initial samples at voltages higher than 70 V. The threshold voltage is decreased to several volts irrespective of polarity after treatment of the crystals in zinc vapors. A similar effect is observed after irradiation. The position of the peak in the electroluminescence band does not depend on the magnitude of voltage or on irradiation. This position is related to the recombination of charge carriers at the centers of interstitial zinc according to the mechanism of excitation of the prebreakdown type. Treatment in zinc vapors and irradiation with γ-ray photons of ZnSe:(Te, O) bring about an increase in the electroluminescence intensity at both polarities of applied voltage.