Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure |
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Authors: | T Lalinský I Rýger G Vanko ? Mozolová A Vincze |
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Affiliation: | a Institute of Electrical Engineering of the Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia b TIMA Laboratory (CNRS, G-INP, UJF), 46 Av. Félix Viallet, 38031 Grenoble, France c Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Department of Microelectronics, Ilkovi?ova 3, 812 19 Bratislava, Slovakia d International Laser Center, Ilkovi?ova 3, 812 19 Bratislava, Slovakia |
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Abstract: | In this work, we introduce a new modified approach to the formation of interdigital transducer (IDT) structures on an AlGaN/GaN heterostructure. The approach is based on a shallow recess-gate plasma etching of the AlGaN barrier layer in combination with “in-situ” SF6 surface plasma treatment applied selectively under the Schottky gate fingers of IDTs. It enables one to modify the two-dimensional electron gas (2DEG) density and the surface field distribution in the region of the IDTs, as is needed for the excitation of a surface acoustic wave (SAW). The measured transfer characteristics of the plasma-treated SAW structures revealed the excitation of SAW at zero bias voltage due to fully depleted 2DEG in the region of the IDTs. High external bias voltages are not necessary for SAW excitation. SIMS depth distribution profiles of F atoms were measured to discuss the impact of SF6 plasma treatment on the performance of the AlGaN/GaN-based IDTs. |
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Keywords: | AlGaN/GaN SAW IDT HEMT SF6 plasma treatment SIMS analysis |
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