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Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies |
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| Authors: | A Bozanic Z Majlinger Q Gao C Crotti K-J Kim B Kim |
| Affiliation: | a Department of Physics, University of Rijeka, 51000 Rijeka, Croatia b Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia c C.N.R. - Istituto Struttura della Materia, Unità staccata di Trieste Basovizza, 34012 Trieste, Italy d National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan e Department of Physics, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, South Korea f Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, South Korea |
| Abstract: | We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of compound semiconductors by synchrotron-based X-ray photoelectron spectroscopy (XPS) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. We have found interstitial molecular nitrogen, N2, in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra at around 400.8 eV, showing the characteristic vibrational fine structure in high-resolution measurements. At the same time, a new peak, shifted towards higher binding energies, emerges in all N 1s photoemission spectra. We have found a shift of 7.6 eV for In-based compounds and 6.7 eV for Ga-based compounds. Our results demonstrate that NEXAFS and core-level XPS are complementary techniques that form a powerful combination for studying molecular nitrogen in compound semiconductors, such as GaSb, InSb, GaAs, InN, GaN or ZnO. |
| Keywords: | XPS NEXAFS Semiconductors Molecular nitrogen |
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