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UNCD electron emitters using Si nanostructure as a template |
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| Authors: | Bohr-Ran Huang Shyankay Jou I-Nan Lin |
| Affiliation: | a Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan b Department of Physics, Tamkang University, Tamsui 251, Taiwan c Graduate Institute of Material Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan |
| Abstract: | The electron field emission (EFE) properties of silicon nanostructures (SiNSs) coated with ultra-nanocrystalline diamond (UNCD) were characterized. The SiNS, comprising cauliflower-like grainy structure and nanorods, was generated by reaction of a Si substrate with an Au film at 1000 °C, and used as templates to grow UNCD. The UNCD films were deposited by microwave plasma-enhanced chemical vapour deposition (MPECVD) using methane and argon as reaction gases. The UNCD films can be grown on the SiNS with or without ultrasonication pretreatment with diamond particles. The EFE properties of the SiNS were improved by adding an UNCD film. The turn-on field (E0) decreased from 17.6 V/μm for the SiNS to 15.2 V/μm for the UNCD/SiNS, and the emission current density increased from 0.095 to 3.8 mA/cm2 at an electric field of 40 V/μm. Ultrasonication pretreatments of SiNS with diamond particles varied the structure and EFE properties of the UNCD/SiNS. It is shown that the ultrasonication pretreatment degraded the field emission properties of the UNCD/SiNS in this study. |
| Keywords: | Electron field emission Ultra-nanocrystalline diamond Silicon nanorods |
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