Influence of additional magnetic field on plasma parameters in magnetron sputtering |
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Authors: | P. Yang D.Z. Wang X.L. Qi S.H. Guo T.C. Ma |
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Affiliation: | School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China |
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Abstract: | With three additional magnetic rings being assembled outside the discharge room and connected with the magnetic field of the conventional unbalanced magnetron sputtering, a closed magnetic field configuration distribution had been formed in the whole discharge room and which can confine discharge plasma more effectively. The spatial distribution of the newly designed magnetic field configuration was simulated using the ANSYS software. Plasma potential, electron temperature, electron density and ion density in the discharge plasma were diagnosed by Langmuir probe and the optical emission line intensity ratios of Ar+/Ar and Cu+/Cu were studied by optical emission spectroscopy. The structure and morphology of the Cu films are measured by scanning electron microscopy. A comparative study of the new magnetic field configuration with the conventional unbalanced magnetic field configuration was conducted. The results showed that the application of the additional magnetic field can increase the plasma density, enhance the ionization degree of the sputtered Cu and decrease the plasma potential effectively. The characteristics of the deposited Cu film were also influenced by the new magnetic field configuration greatly. |
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Keywords: | Additional magnetic field Unbalanced magnetron sputtering Plasma parameter Langmuir probe Optical emission spectroscopy Cu film |
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