| GaAs/P型Al_xGa_(1-x)As异质结界面二维空穴的量子输运特性 |
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| 引用本文： | 周海平,郑厚植,杨富华,曾一平,苏爱民.GaAs/P型Al_xGa_(1-x)As异质结界面二维空穴的量子输运特性[J].半导体学报,1989,10(2):100-107. |
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| 作者姓名： | 周海平 郑厚植 杨富华 曾一平 苏爱民 |
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| 作者单位： | 中国科学院半导体研究所 北京
(周海平，郑厚植，杨富华，曾一平)，中国科学院半导体研究所 北京(苏爱民) |
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| 摘 要： | 本文研究了利用分子束外延技术(MBE)生长的GaAs/P型Al_xGa_(1-x)As异质结构中的二维空穴的整数量子Hall效应(IQHE)、以及空穴复杂子带结构对IQHE的影响;讨论了在弱磁场区产生反常正磁阻效应的量子机理,指出两种载流子经典磁阻理论不能解释这一效应.
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| 关 键 词： | 二维空穴 量子输运特性 异质结 |
Quantum Transport Properties of Two-Dimensional Hole Gas in GaAs/P-Al_xGa_(1-x)As Heterostructures |
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| Zhou Haiping/Institute of Semiconductors,Academia Sinica,BeijingZheng Houzhi/Institute of Semiconductors,Academia Sinica,BeijingYang Fuhua/Institute of Semiconductors,Academia Sinica,BeijingZeng Yiping/Institute of Semiconductors,Academia Sinica,BeijingSu Aimin/Institute of Semiconductors,Academia Sinica,Beijing.Quantum Transport Properties of Two-Dimensional Hole Gas in GaAs/P-Al_xGa_(1-x)As Heterostructures[J].Chinese Journal of Semiconductors,1989,10(2):100-107. |
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| Authors: | Zhou Haiping/Institute of Semiconductors Academia Sinica BeijingZheng Houzhi/Institute of Semiconductors Academia Sinica BeijingYang Fuhua/Institute of Semiconductors Academia Sinica BeijingZeng Yiping/Institute of Semiconductors Academia Sinica BeijingSu Aimin/Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | The influences of the complexities in subband structures of two-dimensional.hole gas onboth integral quantum Hall effect (IQHE) and anomalous positive magnetoresistance (APMR)are studied in GaAs/P-A1_xGa_(1-x)As heterostructures.A model fitting with the measured dataof APMR shows that the APMR in weak magnetic field is not simply due to classical magne-toresistance in a two-carrier conducting system,but to its deep quantum origins in the contextof particle-particle interaction. |
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| Keywords: | Quantum transport properties Two-dimensional hole gas GaAs/P-AlGaAs |
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