| 等电子施、受主杂质共掺的磷化镓发光特性和能量转移 |
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| 引用本文： | 刘晓,江炳熙,林秀华,廖远琰,袁路娃.等电子施、受主杂质共掺的磷化镓发光特性和能量转移[J].半导体学报,1989,10(2):93-99. |
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| 作者姓名： | 刘晓 江炳熙 林秀华 廖远琰 袁路娃 |
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| 作者单位： | 厦门大学物理系，厦门大学物理系，厦门大学物理系，厦门大学化学系，厦门大学化学系 厦门市，厦门市，厦门市 |
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| 摘 要： | 本文研究了液相外延生长的不同掺Bi,N浓度GaP∶(Bi_7N)材料的低温光致荧光光谱,观察到了N谱线“猝灭”和Bi束缚激子发光增强的现象.这可以解释为束缚激子由等电子受主N向等电子施主Bi隧穿能量转移的结果.变激发密度下各中心发光强度的变化关系以及与GaP∶(Bi)材料的实验结果比较,为这一能量转移过程提供了进一步的论据.
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| 关 键 词： | 磷化镓 等电子陷阱 光致发光 |
Luminescent Characteristici and Energy Transfer in GaP:(Bi, N) Crystals |
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| Liu Xiao/.Luminescent Characteristici and Energy Transfer in GaP:(Bi, N) Crystals[J].Chinese Journal of Semiconductors,1989,10(2):93-99. |
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| Authors: | Liu Xiao/ |
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| Affiliation: | Liu Xiao/Department of Physics,Xiamen UniversityJiang Bingxi/Department of Physics,Xiamen UniversityLin Xiuhua/Department of Physics,Xiamen UniversityLiao Yuangyan/Department of Physics,Xiamen UniversityYuan Luwa/Department of Physics,Xiamen University |
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| Abstract: | The low temperature photoluminescence spectra of GaP:(Bi,N) crystals grown by LPEtechnique with different doping levels of Bi and N have been investigated The phenomena ofN-line intensity quenching and Bi-band intensity enhancing were observed.For qualitative in-terpretations of the above mentioned experimental results,it was tentatively proposed that energytransfer of bound exciton from isoelectronic acceptor N to isoelectronic donor Bi had occurredduring the excitation of GaP:(Bi, N).The luminescence intensity variation of various radia-tive centers with excitation levels in GaP:(Bi,N) when compared with those of GaP:(Bi) pro-vides further evidence for the energy transfer process. |
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| Keywords: | GaP Isoelectronic trap Bound exciton Energy transfer Photoluminescence |
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