| InP中的Be、P共注入及其退火特性研究 |
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| 引用本文： | 张永刚,富小妹,潘慧珍. InP中的Be、P共注入及其退火特性研究[J]. 半导体学报, 1989, 10(8): 641-644 |
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| 作者姓名： | 张永刚 富小妹 潘慧珍 |
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| 作者单位： | 中国科学院上海冶金研究所 上海(张永刚，富小妹)，中国科学院上海冶金研究所 上海(潘慧珍) |
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| 摘 要： | 本文对InP中的Be单注入和Be、p共注入及其退火特性进行了比较.SIMS和电化学C-V测试结果表明:采用Be、P共注入可以抑制退火过程中的Be扩散再分布,提高载流子的激活率,改善Pn结的电特性.与单注入相比,共注入样品Be的激活率提高了近一倍.pn结的击穿电压提高,漏电流明显减小.文中对共注入改善退火特性的机理进行了讨论.
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| 关 键 词： | 离子注入 热退火 铍 磷 半导体 |
Study on Ion Co-Implantation of Be and P into InP and Its Annealing Behaviour |
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| Zhang Yonggang/. Study on Ion Co-Implantation of Be and P into InP and Its Annealing Behaviour[J]. Chinese Journal of Semiconductors, 1989, 10(8): 641-644 |
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| Authors: | Zhang Yonggang/ |
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| Affiliation: | Zhang Yonggang/Shanghai Institute of Metallurgy,Academia Sinica,ShanghaiFu Xiaomei/Shanghai Institute of Metallurgy,Academia Sinica,ShanghaiPan Huizhen/Shanghai Institute of Metallurgy,Academia Sinica,Shanghai |
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| Abstract: | The comparison between Be single-implantation and Be, P co-implantation has been made.SIMS and electrochemical C-V measurement show that the indiffusion and redistribution duringfurnace annealing have been suppressed by co-implant ation.This results in higher activationand better junction characteristics.Doubling in activation and an order of reduction in p-njunction's leakage current have been reached.The mechanism has been discussed. |
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| Keywords: | Ion implantation Thermal annealing Beryllium Phosphor Compound semiconductor |
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