| 硅价带自旋-轨道分裂的高分辨率光电导谱测定 |
| |
| 引用本文： | 俞志毅,黄叶肖,沈学础. 硅价带自旋-轨道分裂的高分辨率光电导谱测定[J]. 半导体学报, 1989, 10(5): 399-402 |
| |
| 作者姓名： | 俞志毅 黄叶肖 沈学础 |
| |
| 作者单位： | 中国科学院上海技术物理研究所红外物理开放研究实验室(俞志毅，黄叶肖)，中国科学院上海技术物理研究所红外物理开放研究实验室(沈学础) |
| |
| 摘 要： | 采用高分辨率光电导谱观察到高纯区熔硅单晶中剩余硼受主从基态到各共振激发态的p_(1/2)系列跃迁谱线.考虑裂开P_(1/2)价带的非抛物线性,精确得到了硼杂质从基态到P_(1/2)价带的电离能E_1~*(硼)=88.45±0.01meV,进而获得硅价带的自旋-轨道分裂为△_o=42.62±0.01meV.
|
| 关 键 词： | 硅 光电导谱 价带自旋 轨道分裂 |
Determination of Spin-Orbit Splitting of Valence Bands in Silicon by Means of High-Resolution Photoconductive Spectroscopy |
| |
| Yu Zhiyi/Laboratory for Infrared Physics. Determination of Spin-Orbit Splitting of Valence Bands in Silicon by Means of High-Resolution Photoconductive Spectroscopy[J]. Chinese Journal of Semiconductors, 1989, 10(5): 399-402 |
| |
| Authors: | Yu Zhiyi/Laboratory for Infrared Physics |
| |
| Affiliation: | Yu Zhiyi/Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Academia Sinica Huang Yexiao/Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Academia Sinica Shen Xuechu/Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Academia Sinica |
| |
| Abstract: | |
| |
| Keywords: | High-resolution photoconductive spectroscopy High-purity silicon Shallow acceptors Spin-orbit splitting |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
