| MoSi_2硅化物的形成及电子结构的研究 |
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| 引用本文： | 李宝骐,季明荣,吴建新,许振嘉,阎江. MoSi_2硅化物的形成及电子结构的研究[J]. 半导体学报, 1989, 10(3): 179-185 |
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| 作者姓名： | 李宝骐 季明荣 吴建新 许振嘉 阎江 |
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| 作者单位： | 中国科学技术大学 合肥(李宝骐，季明荣，吴建新)，中国科学院半导体研究所 北京(许振嘉)，中国科学院半导体研究所 北京(阎江) |
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| 摘 要： | 利用XPS、UPS、AES、X-光衍射和拉曼散射等技术,研究了在稳态热退火条件下共溅射的Mo-Si合金膜,硅化物的形成及电子结构特性.
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| 关 键 词： | 金属 半导体界面 光电子谱 硅化物 |
Electronic Structure and Formation of MoSi_2 Silicide |
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| Li Baoqi University of Science and Technology of China,HefeiJi Mingrong University of Science and Technology of China,HefeiWu Jianxin University of Science and Technology of China,HefeiHsu Chenchia Institute of Semiconductors,Academia Sinica,BeijingYian Jiang Institute of Semiconductors,Academia Sinica,Beijing. Electronic Structure and Formation of MoSi_2 Silicide[J]. Chinese Journal of Semiconductors, 1989, 10(3): 179-185 |
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| Authors: | Li Baoqi University of Science Technology of China HefeiJi Mingrong University of Science Technology of China HefeiWu Jianxin University of Science Technology of China HefeiHsu Chenchia Institute of Semiconductors Academia Sinica BeijingYian Jiang Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | The properties of electronic structure and formations of MoSi_2 silicide prepared by co-sputtering Mo and Si atoms on silicon substrates under the condition of the steady thermal an-nealing are investigated with the techniques including XPS,UPS,AES,X-ray diffraction andRamman scattering spectroscopy. |
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| Keywords: | Interfaces Metal-Semiconductors Photoemission Spectroscopies |
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