| 氨气敏Pd-Ir合金栅MOS晶体管 |
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| 引用本文： | 张维新,赵玲娟. 氨气敏Pd-Ir合金栅MOS晶体管[J]. 半导体学报, 1989, 10(9): 706-708 |
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| 作者姓名： | 张维新 赵玲娟 |
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| 作者单位： | 天津大学电子工程系(张维新)，天津大学电子工程系(赵玲娟) |
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| 摘 要： | 本文介绍一种新型氨气敏MOS场效应晶体管.采用Pd-Ir合金作为场效应晶体管的金属栅极.器件对氨气有足够的灵敏度和较好的选择性.文章分析了器件对氨气的敏感机理.
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| 关 键 词： | 氨气敏 MOS晶体管 合金栅 Pd－Ir |
A Pd-Ir Alloy Gate MOS Transistor Sensitive to Ammonia |
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| Zhang Weixin/. A Pd-Ir Alloy Gate MOS Transistor Sensitive to Ammonia[J]. Chinese Journal of Semiconductors, 1989, 10(9): 706-708 |
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| Authors: | Zhang Weixin/ |
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| Affiliation: | Zhang Weixin/Department of Electronic Engineering,Tianjin UniversityZhao Lingjuan/Department of Electronic Engineering,Tianjin University |
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| Abstract: | A new MOS field effect transistor sensitive to ammonia has been reported.The gate ofMOS transistor consists of Pd-Ir alloy film.The sensitivity and selectivity of the devices areperfect.The mechanism of sensitivity to ammonia has been explained. |
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| Keywords: | Sensitive to ammonia MOS transistor Pd-lr alloy gate Selectivity Sensitivity |
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