A Planar CMOS Field-Emission Vacuum Magnetic Sensor

We have fabricated a CMOS vacuum magnetic sensor that exploits the deflection of an electron beam produced by field emission by a perpendicular magnetic field. The device is planar and fabricated by conventional lithography and etching processes. An extremely high magnetic field sensitivity of $hbox{4} times hbox{10}^{3}%/hbox{T}$ is reported.