| GaInPAs/InP晶格匹配超晶格材料电子态研究 |
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| 引用本文： | 沈静志,徐至中. GaInPAs/InP晶格匹配超晶格材料电子态研究[J]. 半导体学报, 1990, 11(3): 233-237 |
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| 作者姓名： | 沈静志 徐至中 |
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| 作者单位： | 复旦大学物理系，复旦大学物理系 上海 上海市机械学院系统工程系，上海 |
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| 摘 要： | 本文研究了GaInPAs/InP晶格匹配超晶格材料<110>方向的电子结构,对薄层超晶格和与之具有相同化学组份的混晶的色散关系作了比较。研究了带边状态密度在超晶格每一层的分布情况,计算了GaInPAs/InP晶格匹配超晶格的能隙随厚度、组份的变化趋势。研究结果表明:薄层超晶格与具有相同化学组份的混晶的电子结构基本相同,能隙边状态密度偏重于分布在超晶格的GaInPAs原子层内。
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| 关 键 词： | 超晶格 电子态 能隙 能带色散关系 |
Studies of Electronic States in GaInPAs/InP Lattice-matched Superlattice |
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| Shen Jingzhi/. Studies of Electronic States in GaInPAs/InP Lattice-matched Superlattice[J]. Chinese Journal of Semiconductors, 1990, 11(3): 233-237 |
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| Authors: | Shen Jingzhi/ |
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| Affiliation: | Shen Jingzhi/Department of Physics,Fudan UniversityXu Zhizhong/Department of Physics,Fudan University |
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| Abstract: | The electronic structure of GaInPAs/InP(110) lattice-matched superlattice is studied. Theband dispersion relation of thin-layer superlattice is compared with that of the alloy with thesame chemical composition.The densities of states at band edges and the energy gap versuscomposition and thickness are analysed.The results show that though the similarity appears inband dispersion relations between thin-layer superla(?)tice and the corresponding alloy with thesame composition,the density of states at band edges distributes particularly in the alloy layersof the superlattice, which reveals a precursor sate of quantum well formation. |
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| Keywords: | superlattice electronic states energy gap dispersion relation of energy band |
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