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Study on (Y, Gd)3(Al, Ga)5O12:Ce^3+ Phosphor
引用本文:张书生,庄卫东,赵春雷,胡运生,何华强,黄小卫.Study on (Y, Gd)3(Al, Ga)5O12:Ce^3+ Phosphor[J].中国稀土学报(英文版),2004,22(1):118-121.
作者姓名:张书生  庄卫东  赵春雷  胡运生  何华强  黄小卫
作者单位:[1]NationalEngineeringResearchCenterforRareEarthMaterials,GeneralResearchInstituteforNonferrousMetals,andGRIREMAdvancedMaterialsCo.Ltd.,Beijing100088,China [2]CollegeofChemistryandChemicalEngineering,CentralSouthUniversity,Changsha410083,China
摘    要:(Y1-a,Gda ) 3 - x (Al1-b, Gab) 5O12 : Cex^3 was synthesized by high-temperature solid state reaction in reducing atmosphere based on high purity raw materials. The influences of y^3 , Gd^3 , A1^3 , Ga^3 and activator-Ce^3 on the performance of the phosphor were investigated. Ce^3 is the luminescent center and activates the phosphor after it replaces Y partially. When x is less than 0.12, the volume of the crystal and the emission intensity of the phosphor increase with the quantity of Ce^3 . When CeO2 is added too much, the phase CeAlO3 will appear. The excitation and emission peaks of the phosphor will shift to longer wavelength when the amount of Gd^3 increases. The wavelength of the emission peak can shif tabout 20 nm when a equals 0.45. In opposite, the excitation and emission peaks will shift to shorter wavelength, when part of Al^3 is replaced by Ga^3 . The wavelength of the emission peak can shift about 20 nm when b equals 0.55.Through the replacemeat of Y^3 or Al^3 by Gd^3 or Ga^3 , the emission peak of the phosphor can be adjusted from 520 to 560 nm. In this way, the phosphor is more suitable for different chips.

关 键 词:荧光材料  激光器  发光二极管  稀土  掺杂  制备
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