Polarization dependence of the stark shift in the absorption edge of InGaAs/GaAs quantum dot heterostructures |
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| Authors: | E L Portnoi I M Gadzhiev A E Gubenko M M Sobolev A R Kovsh I O Bakshaev |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) NL Nanosemiconductor GmbH, 44263 Dortmund, Germany |
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| Abstract: | The Stark effect has been studied in multilayer InGaAs/GaAs laser structures with self-assembled quantum dots (QDs). A shift in the absorption edge depending on the reverse bias voltage has been measured in a two-section laser diode. The QD absorption edge shifts toward longer wavelengths with increasing electric field strength. It is established that the QD absorption depends on the polarization of light. The intensity at which TE-polarized luminescence in laser structures is studied is more than ten times higher than that of the TE-polarized emission component, which is explained by higher amplification of the TE mode. |
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