Atom Probe Tomography of Zinc Oxide Nanowires |
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Authors: | Nabil Dawahre Gang Shen Soner Balci William Baughman David S Wilbert Nick Harris Lee Butler Rich Martens Seongsin Margaret Kim Patrick Kung |
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Affiliation: | 1.Department of Electrical and Computer Engineering,The University of Alabama,Tuscaloosa,USA;2.Central Analytical Facility,The University of Alabama,Tuscaloosa,USA |
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Abstract: | Wide-bandgap zinc oxide (ZnO) semiconductors and nanowires have become important materials for electronic and photonic device
applications. In this work, we report the growth of well-aligned single-crystal ZnO nanowire arrays on sapphire substrates
by chemical vapor deposition and the development of atom probe tomography, an emerging nanoscale characterization method capable
of providing deeper insight into the three-dimensional distribution of atoms and impurities within its structure. Using a
metal-catalyst-free approach, the influence of the growth parameters on the orientation and density of the nanowires were
studied. The resulting ZnO nanowires were determined to be single crystalline, with diameter on the order of 50 nm to 150 nm
and length that could be controlled between 0.5 μm to 20 μm. Their density was on the order of high 108 cm−2 to low 109 cm−2. In addition to routine characterizations using scanning and transmission electron microscopy, x-ray diffraction, photoluminescence,
and Raman spectroscopy, we developed the atom probe tomography technique for ZnO nanowires, comparing the voltage pulse and
laser pulse modes. In-depth analysis of the data was carried out to determine the accurate chemical composition of the nanowires
and reveal the incorporation of nitrogen impurities. The current–voltage characteristics of individual nanowires were measured
to determine their electrical properties. |
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