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| 各向异性腐蚀表面粗糙度的"应力模型" | |
| 引用本文： | 郝达兵,姜岩峰,黄庆安,王维波.各向异性腐蚀表面粗糙度的"应力模型"[J].光电子技术,2003,23(3):202-206. |
| 作者姓名： | 郝达兵 姜岩峰 黄庆安 王维波 |
| 作者单位： | 1. 南京电子器件研究所,南京,210016 2. 北方工业大学现场总线技术与自动化北京市重点实验室,北京,100041 3. 东南大学教育部微机电系统(MEMS)重点实验室,南京,210096 |
| 摘 要： | 微电子机械系统(MEMS)关键的体加工工艺——各向异性腐蚀的样品表面会出现一定程度的不平面貌，针对这一现象提出了“应力模型”，用来解释腐蚀后表面粗糙度出现的物理机制，对表面激活能、腐蚀液激活能等物理概念进行了分析，提出了腐蚀表面粗糙度的计算公式，解释了各向异性腐蚀与表面形貌相关的实验现象。 |
| 关 键 词： | 各向异性腐蚀 表面粗糙度 “应力模型” 表面激活能 腐蚀液激活能 |
| 文章编号： | 1005-488X(2003)03-0202-05 |
| 修稿时间： | 2003年4月29日 |
Stress Model for Surface Roughness of Silicon Anisotropic Etching |
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| HAO Da bing ,JIANG Yan feng ,HUANG Qing an ,WANG Wei bo.Stress Model for Surface Roughness of Silicon Anisotropic Etching[J].Optoelectronic Technology,2003,23(3):202-206. | |
| Authors: | HAO Da bing JIANG Yan feng HUANG Qing an WANG Wei bo |
| Affiliation: | HAO Da bing 1,JIANG Yan feng 2,HUANG Qing an 3,WANG Wei bo 1 |
| Abstract: | With the silicon anisotropic etching, which is a key fabrication process in the field of microelectro mechanical system(MEMS), the surface of the etched sample will show somewhat roughness. Focusing on this experimental phenomenon, a stress model has been proposed to explain the physical mechanism of this roughness emergence. In this model, some basic physical concepts, such as the surface activation energy, etchant activation energy and relative activation energy are analyzed, an equation to calculate the etching roughness is deduced, some experimental phenomena occurring during anisotropic etching have been explained. |
| Keywords: | surface roughness anisotropic etching activation energy |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |