Current transport in fluorine implanted GaAs |
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Authors: | L. He W. A. Anderson |
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Affiliation: | (1) Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State Universiy of New York at Buffalo, 217 Bonner Hall, 14260 Amherst, NY |
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Abstract: | Effects of fluorine implantation in GaAs have been investigated by electrical characterization. Ion implantation at 100 keV energy was conducted with doses of 1011 and 1012/cm2. The effect of fluorine implantation on current-voltage (I-V) characteristics of Schottky diodes was significant. Carrier compensation was observed after implantation by the improved I-V characteristics. The lower dose implanted samples showed thermionic emission dominated characteristics in the measurement temperature range of 300 to 100K. The starting wafer and the low dose implanted samples after rapid thermal annealing (RTA) showed similar I-V properties with excess current in the lower temperature range dominated by recombination. The higher dose implanted samples showed increased excess current in the whole temperature range which may result from the severe damage-induced surface recombination. These samples after RTA treatment did not recover from implantation damage as in the low dose implantation case. However, very good I-V characteristics were seen in the higher dose implanted samples after RTA. The influence of the higher dose ion implantation was to produce more thermal stability. The results show the potential application of fluorine implantation in GaAs device fabrication. |
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Keywords: | Fluorine ion-implantation GaAs rapid thermal annealing (RTA) |
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