| 移动通信用GaAs HBT功率放大器 |
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| 引用本文： | 钱峰,陈新宇,周剑明,陈效建.移动通信用GaAs HBT功率放大器[J].固体电子学研究与进展,2001,21(4):375-379,386. |
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| 作者姓名： | 钱峰 陈新宇 周剑明 陈效建 |
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| 作者单位： | 南京电子器件研究所, |
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| 摘 要： | 介绍了移动通信用 Ga As HBT功率放大器的设计、制作 ,给出了电路拓扑。该两级放大电路在 180 0 MHz、3.6 V偏压下 ,相关增益 >30 d B,1分贝压缩点输出功率达到 2 8.8d Bm,饱和输出功率 >30 d Bm,最大效率 >37%。采用 Φ 76 mm工艺制作 ,工艺成品率高
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| 关 键 词： | 砷化镓异质结双极晶体管 功率放大器 移动通信 |
| 文章编号： | 1000-3819(2001)04-375-05 |
| 修稿时间： | 1999年10月25 |
GaAs HBT Power Amplifier Used for Mobile Communication |
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| QIAN Feng,CHEN Xingyu,ZHOU Jianming,CHEN Xiaojian.GaAs HBT Power Amplifier Used for Mobile Communication[J].Research & Progress of Solid State Electronics,2001,21(4):375-379,386. |
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| Authors: | QIAN Feng CHEN Xingyu ZHOU Jianming CHEN Xiaojian |
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| Abstract: | This paper describes the design,fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system.The circuit topology is presented.This two stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequecy 1 800 MHz @ 3.6 V bias.A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter. |
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| Keywords: | GaAs HBT power amplifier mobile communication |
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