An integrated PIN/MISS OEIC for high current photoreceiverapplications

A new PIN/MISS photoreceiver with very high output current has been developed by using the combination of an amorphous silicon germanium alloy PIN photodiode and a metal-insulator-semiconductor switch (MISS) device. The developed photoreceiver uses a PIN photodiode as the light absorption structure and light wavelength selector and the MISS device as an actuator to drive an electronic load. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6 V under an incident light power of P_in=100 μW, and has a rise time of 465 μs with a load resistance of R=1 kΩ. The peak response wavelength of the PIN photodiode is at 905 nm, i.e., infrared light. Thus the high output current PIN/MISS photoreceiver is a good candidate for some specific applications