12GHz单片组合低噪声GaAs MESFET放大器 |
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引用本文: | 王福臣,茅经怀,俞土法.12GHz单片组合低噪声GaAs MESFET放大器[J].固体电子学研究与进展,1986(4). |
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作者姓名: | 王福臣 茅经怀 俞土法 |
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作者单位: | 南京固体器件研究所
(王福臣,茅经怀),南京固体器件研究所(俞土法) |
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摘 要: | 本文叙述了12GHz单片组合的低噪声GaAs MESFET放大器的设计和制造.每级单片放大器包含一个有源元件FET、一个隔直电容和两个射频旁路电容.在11.7~12.2GHz范围内,单级放大器增益6.0dB,噪声系数3~3.5dB,三级放大器增益16~18dB,噪声系数≤4.0dB.
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12GHz Monolithic Cascade Low Noise GaAs MESFET Amplifiers |
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Abstract: | This paper presents the design and the fabrication for 12GHz monolithic cascade low noise GaAs MESFET amplifiers. Each MIC consists of one FET as an active element, one de-block capacitor and two RF-bypass capacitors.
In the range of 11.7-12.2GHz the one-stage shows a gain of 6dB, a noise figure of 3-3.5dB and the three-stage has 16-13dB gain, less than 4dB noise figure. |
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