Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing |
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| Authors: | R. Koseva,I. Mö nchD. Meier,J. SchumannK.-F. Arndt,L. SchultzB. Zhao,O.G. Schmidt |
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| Affiliation: | a Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germanyb Institute for Metallic Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germanyc Institute of Physical Chemistry of Polymers, TU Dresden, Mommsenstrasse 13, D-01062 Dresden, Germanyd Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204, China |
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| Abstract: | Bismuth thin films were grown on oxidized Si substrates by electron beam evaporation. The films showed clear tendency to form hillocks inducing large surface roughness. The evolution of hillocks with film thickness and deposition rate was studied. In order to improve the surface quality of the Bi films a nanoscale mechanical polishing was performed. Upon polishing, hillocks-free Bi thin films were obtained without influencing the crystalline structure and the resistivity of the films. The achieved film surface quality allows to prepare high quality Bi Hall probes with an active area down to the nm2 range promising for advanced device performance. |
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| Keywords: | Bismuth Thin films Hillocks Nanoscale mechanical polishing Hall sensors |
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