一种基于半导体激光器的电子加速方法

介质激光加速器是一种高梯度微纳结构的加速器,是未来加速器小型化的重要技术方向之一。本文提出了一种基于半导体激光器的介质激光加速器方案。在此种方案中,加速光栅位于谐振腔内部,省去了高功率激光耦合至加速光栅的外部光路,为介质激光加速器的级联提供了一种新的思路。文中着重研究了加速结构对谐振腔内部场分布的影响,给出了谐振腔场横向截面分布的仿真结果,阐述在该结构中采用高斯光束激励时电子束加速相位匹配的问题,研究了制备精度误差对场分布的影响,最后给出了对加工精度误差的最低要求。

An Electron Acceleration Method Based on Semiconductor Laser

Dielectric laser accelerator is a kind of accelerator with high gradient and nano-structure. It is one of the important technical directions for future miniaturization of accelerator. A dielectric laser accelerator scheme based on semiconductor laser is proposed. In this scheme, the acceleration grating is located inside the resonant cavity, which eliminates the optical path of high-power laser coupling to the acceleration grating, and provides a new idea for the cascade of dielectric laser accelerators. The influence of the accelerating structure on the field distribution inside the resonant cavity is studied, and the simulation results of the transverse section distribution of the resonant cavity field are given. The problem of the acceleration phase matching of the electron beam excited by a Gaussian beam in this structure is described. The influence of preparation accuracy error on field distribution is studied, and the minimum requirement of machining accuracy error is given.