Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications |
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| Authors: | Johnson JB Joseph AJ Sheridan DC Maladi RM Brandt P-O Persson J Andersson J Bjorneklett A Persson U Abasi F Tilly L |
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| Affiliation: | IBM Corp., Essex Junction, VT, USA; |
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| Abstract: | This paper discusses and illustrates the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier (PA) applications. Experimental results addressing ruggedness, ac performance, and safe operating area for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless PA applications are considered. Circuit results for GSM, PCS, GPRS, and EDGE front-end modules have been obtained. A one-chip solution is demonstrated, including control circuitry and switching functionality, that supports all GPRS, PCS, and EDGE modes featuring output power at 33.8 dBm and overall power added efficiency of 37% withstanding voltage standing wave ratio conditions of 15:1. |
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