Influence of small amounts of Fe and V on the synthesis and stability of Ti3SiC2 |
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| Affiliation: | 1. Center of Materials Science and Engineering, School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing, 100044, China;2. CEMES-CNRS, Université de Toulouse, UPS, 29 Rue Jeanne Marvig, BP 94347, Toulouse Cedex 04, France;3. Institut PPRIME, CNRS/Université de Poitiers/ENSMA, UPR 3346, Bât. SP2MI, Téléport2, BP179, 86962, Futuroscope-Chasseneuil Cedex, France;1. Institut PPRIME, Département de Physique et Mécanique des Matériaux CNRS, Université de Poitiers, ENSMA, UPR 3346 SP2MI, Téléport 2, Boulevard Marie et Pierre Curie, BP30179 86962 Futuroscope, Chasseneuil Cedex, France;2. Laboratoire Elaboration, Caractérisation des Matériaux et Modélisation, Université Mouloud Mammeri de Tizi-Ouzou, 15000 Algérie;1. Department of Mechanical Engineering, Texas A&M University, College Station, TX, USA;2. Department of Materials Science and Engineering, Texas A&M University, College Station, TX, USA |
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| Abstract: | Polycrystalline bulk samples of (Ti1-yMey)3SiC2, where Me=Fe or V and y=0.01 to 0.1, were fabricated by reactive hot isostatic pressing of a mixture of Ti, C (graphite), SiC and Fe or V at 1450°C for 4 h under a pressure of 60 MPa. X-ray diffraction and scanning electron microscopy of the fully dense samples have shown that small amounts of Fe and V interfere with the reaction between Ti, C and SiC leading to the presence of SiC, TiCx, as well as different Fe and V-containing phases in the final microstructures. The presence of these impurity phases also reduces the temperature at which Ti3SiC2 decomposes. The decomposition is manifested by the formation of a network of pores when the samples are annealed at 1600°C, a temperature at which pure Ti3SiC2 is thermally stable. The concentration threshold for this decomposition is as low as 1 at%. |
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