Homoepitaxial growth on fine columns of single crystal diamond for a field emitter |
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| Affiliation: | 1. FCT Project/JFCC, Center for Advanced Research Projects, 6F, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;2. Sumitomo Electric Industries, Inc., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan;1. E.O. Paton Electric Welding Institute of National Academy of Science of Ukraine, 11 Kazimira Malevicha Street, Kiev 03680, Ukraine;2. G.V. Kurdyumov Institute for Metal Physics of National Academy of Science of Ukraine, 36 Academician Vernadsky Blvd., Kiev 03680, Ukraine;1. Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi 221005, India;2. Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6AD, UK;1. Institute of Organic Chemistry and Biochemistry, v.v.i. Academy of Sciences of the Czech Republic, Flemingovo nam. 2, 166 10 Prague 6, Czech Republic;2. Charles University, Faculty of Science, Department of Inorganic Chemistry, Hlavova 2030, 128 40 Prague 2, Czech Republic;3. J. Heyrovský Institute of Physical Chemistry, v.v.i. Academy of Sciences of the Czech Republic, Dolejskova 3, 18223 Prague 8, Czech Republic;4. Institute of Physics, v.v.i. Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic;1. V.S. Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Koptyug Pr., 3, Novosibirsk 630090, Russian Federation;2. Novosibirsk State University, Pirogova, 2, Novosibirsk 630090, Russian Federation |
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| Abstract: | We have fabricated a pyramidal emitter array on single crystal diamond using an etching technique and a homoepitaxial growth technique. We carried out homoepitaxial growth on fine columns of a single crystal diamond in an NIRIM-type microwave-plasma-assisted chemical vapor deposition reactor in the undoped condition. It was found that temperature and methane concentration had a great influence on the oriented growth. We have found that there is a substantial tendency for a lower methane concentration to result in 〈111〉-oriented growth and for a higher methane concentration to give 〈100〉-oriented growth for a polycrystalline diamond film on Si. By controlling the growth conditions, we have obtained various shapes of diamond particle (cubic, cuboctahedral, octahedral) and have also fabricated a pyramidal sharp tip on single crystal diamond (100) and (110) surfaces. For a (100) substrate, we found that a fine pyramid tip was surrounded by not only four {111} planes but also four slightly slopes faces at the base. We surmise that the crystalline face agreed with the slightly sloped plane and grew selectively because it has the highest lateral growth rate among the other oriented crystalline faces. For a (110) substrate, a fine pyramidal tip was surrounded by two {100} planes and two {111} planes and the top of the tip had a ridge between two {111} planes because of the less than optimum conditions. The field emission from the (100) and (110) substrates was also measured. The emission current of the (110) substrate was comparatively large. |
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