Towards homogeneous and reproducible highly oriented diamond films

Diamond films have been deposited by the microwave plasma assisted chemical vapor deposition technique using an ultra short bias enhanced nucleation step to synthesize highly oriented diamond films on single silicon substrate. Firstly in this paper, we focus on the bias enhanced nucleation process to obtain homogeneous and reproducible diamond deposits. By optimizing the process, we obtained a crystal density value of 10⁹ cm⁻² on the whole substrate surface for a reduced polarization time of 60 s. Then, using scanning electron microscopy and image analysis, we report cartographies of crystal densities, covering rate and average radius on the whole sample surface. Next, we analyze a local area of the surface to produce a size distribution of the particles versus their type. Lastly, we present a discussion on the ratio of epitaxial crystals.