Electron emission from diamond thin films deposited by microwave plasma-chemical vapor deposition method |
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| Affiliation: | 1. State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023, PR China;2. Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, PR China;1. Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore, Singapore;2. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3. Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong, China;4. School of Materials Science and Engineering, Center for Nano and Micro Mechanics (CNMM), Tsinghua University, Beijing 100084, China;1. Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China;3. North Night Vision Technology Company Limited, China;4. International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China |
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| Abstract: | Diamond films with different crystal structures, morphologies and surface characteristics were synthesized under various deposition parameters and annealing conditions by the microwave plasma chemical vapor deposition (MWPCVD) method using gas mixtures of CH4, CO and H2. The effects of CH4 concentrations, grain sizes, grain orientations, film thicknesses and annealing technologies in various ambient gases on planar electron emission of diamond films were studied. The results show that small-grained and (011)-oriented diamond films deposited under the condition of high CH4 concentration present the properties of high emission current and low threshold voltage; the emission current increases with decreasing the film thickness. There are largest current density and lowest threshold voltage at the film thickness of 1.5 μm. The annealing in H2 after deposition appears to be more beneficial in lowering the threshold voltage, increasing emission current and improving stability for electron emission of films than annealing in N2 or Ar. These results indicate that diamond thin films with high emission current, low threshold voltage and high stability can be obtained by selecting suitable deposition parameters of diamond films. |
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