Study on SiC layers synthesized with carbon ion beam at low substrate temperature |
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| Affiliation: | 1. Department of Materials Science & Technology, Beijing Polytechnic University, Beijing 100022, PR China;2. Material Technology Research Center, the Chinese University of Hong Kong, Shatin, Hong Kong;1. Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China;2. Pacific Northwest National Laboratory, Richland, WA 99352, USA;3. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;1. Massachusetts Institute of Technology, Cambridge, MA, USA;2. Stony Brook University, Stony Brook, NY, USA;3. Oak Ridge National Laboratory, Oak Ridge, TN, USA |
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| Abstract: | Carbon implantation into silicon, at beam energies from 30 to 60 keV and at ion doses of 3.0×1017 to 1.6×1018cm−2 with a metal vapor vacuum arc ion, was performed to form SiC layers at substrate temperatures below 400°C. It was found that the substrate temperature for the conversion of amorphous phase SiC (a-SiC) into cubic phase SiC (β-SiC) during the carbon implantation, is much lower than the conversion temperature (approx. 900°C) of a-SiC into β-SiC induced by the post-annealing. The feature of the low substrate temperature of the metal vapor vacuum arc (MEVVA) ion source is thought to be due to the ion-beam-induced crystallization (IBIC) effect. The profile of the carbon content, which is of Gaussian shape similar to the data of TRIM-90 calculation, is associated well with the distribution of the ratio of [relative amount of β-SiC/relative amount of a-SiC] in the SiC layers. Moreover, in the carbon rich region the higher degree of crystallization is attributed to the higher β-SiC fraction. |
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