Study of stress and infra-red absorption line of BN films containing various fractions of cubic phase |
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| Affiliation: | 1. Groupe de Physique des Plasmas, Université de Montréal, C.P. 6128, Succursale Centre-Ville, Montréal, H3C 3J7, Québec, Canada;2. Institut d'' Electronique Fondamentale, URA CNRS 22, Bat 220, Université Paris-Sud, F-91405 Orsay cedex, France;3. LERMAT. ISMRA, Boulevard du Maréchal Juin, F-14050 Caen cedex, France;1. Lebanese German University (LGU), Sahel-Alma, Jounieh, Lebanon;2. LSPM–CNRS, Université Sorbonne Paris Nord, 93430, Villetaneuse, France;1. Department of Neurology, The Fifth Affiliated Hospital of Zhengzhou University, Zhengzhou, Henan 450052, China;2. Department of Neurology, The First Affiliated Hospital of Zhengzhou University, Zhengzhou, Henan 450000, China;3. Department of Anesthesiology and Critical Care Medicine, Johns Hopkins University School of Medicine, Baltimore, MD 21205, USA;1. Dipartimento di Chimica Biologia e Biotecnologie, Università degli Studi di Perugia, 06123 Perugia, Italy;2. Dipartimento di Ingegneria Civile e Ambientale, Università degli Studi di Perugia, 06125 Perugia, Italy;1. Institute for Energy Research, Jiangsu University, Zhenjiang, 212013, PR China;2. School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, 212013, PR China;3. Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang, 441053, People’s Republic of China;4. School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, PR China |
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| Abstract: | This paper focuses on the stress dependence of infrared absorption lines of BN films synthesized by ion beam assisted deposition (IBAD) and containing various fractions of cubic phase. The compressive stress ranges from −3 to –11 GPa and is found to be conditioned by the content in the c-BN phase. This stress results in a characteristic shift towards high wavenumbers of the IR TO c-BN peak. A frequency shift rate of 3.0±0.5 cm−1/GPa was derived, very close to the one measured for bulk c-BN under hydrostatic pressure. The effect of post-deposition annealing was analyzed. We found the compressive stress to be slightly modified by a post-deposition annealing at 800°C. The resulting relaxation effect is found to be most effective in the c-BN part of mixed films, and in the h-BN one in c-BN rich films (>80% of cubic phase). From the latter observation, the stress level retained initially in the sp2-bonded fraction should reach −10 GPa. This stress level suggests a mechanism involving the rhombohedral form of BN as a precursory phase for c-BN nucleation. |
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