Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride

Layers of silicon with an isotope composition that differs from the native composition have been obtained by the method of plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride. The deposited layers possess an amorphous structure and high oxygen content. The Raman spectra and the spectra of optical transmission in the IR range are presented. The in-depth distribution of Si isotopes has been determined using the second ion mass spectrometry techniques.