直流磁过滤电弧源制备银膜的工艺参数研究

为了探索电弧离子镀技术制备银薄膜中相关的工艺参数，利用直流磁过滤电弧源在K9玻璃和硅片上制备了银膜，通过白光干涉仪和剥离实验对所制备银膜的厚度、表面粗糙度和附着力进行检测，分析靶电流、基片偏压和过渡层对银薄膜沉积速率、粗糙度及附着力等特性的影响．实验结果表明：当靶电流为90．0A时，沉积速率为1．84nm／s，在偏压为＋10V时，得到膜层粗糙度为0．5355nm；利用过渡层的辅助，通过电弧离子镀有效地提高了银膜的附着力．

Exploration on Ag Film Deposition by Magnetic Filtration Arc Ion Plating

In order to explore the influence of parameters of Ag tilm, deposltecl by magnenc Iurranon arc ion plating（MFAIP）, such as the Ag target current, the bias of substrate and the usage of transition layer, to the thickness, roughness, adhesion of Ag film, Ag films were deposited on K9 glass and silicon substrate, and tested by white-light interferometer and stripping test respectively. Experimental results showed that the deposition rate of Ag films was 1.84 nm/s with the target current fixed at 90 A, and a minimum value of 0. 535 5 nm of the surface roughness was got at a bias of ＋ 10 V. With the introduction of the transition layer, the adhesion of the Ag film deposited by MFAIP was obviously improved.