Dielectric properties of amorphous BaTiO3 films deposited by RF magnetron sputtering |
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| Affiliation: | 1. Laboratory for Electrostatics and Dielectric Materials, CNRS-25, Avenue des Martyrs, Grenoble 38042, France;2. Laboratory for Materials, Organization and Properties, Campus Universitaire, El Manar 2092, Tunis, Tunisia;1. Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, No. 4800, Cao’an Road, Shanghai 201804, China;2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China;1. Instituto Politécnico Nacional, ESIME UA, Av. de las Granjas, 682. Col. Santa Catarina, México, D. F., C. P. 02250, Mexico;2. COARA, UASLP, Carr. a Cedral km 5+600, San José de las Trojes, 78700, Matehuala, S.L.P., México;3. Instituto Politécnico Nacional, CICATA Legaria, Calz. Legaria, 694. Col. Irrigación, México, D.F., C.P. 11500, México;1. Key Laboratory of Advanced Materials of Ministry of Education of China, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China;2. State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing, 100084, China;3. Beijing Key Laboratory of Quality Evaluation Technology for Hygiene and Safety of Plastics, Beijing Technology and Business University, China;1. Center of Excellence for Magnetic Materials, School of Metallurgy and Materials, Faculty of Engineering, University of Tehran, Tehran, Iran;2. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;3. Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;4. Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea |
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| Abstract: | In the present paper, dielectric properties of a-BaTiO3 films have been investigated as a function of frequency (10−1 to 105 Hz) and temperature (25–350 °C) using the dielectric spectroscopy technique. Relaxation and ac-conductivity processes were analyzed in order to study charge transport in the bulk and at the electrode-film interfaces. It seems that the oxygen vacancies play an essential role in both processes. |
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