Deposition of highly oriented lanthanum nickel oxide thin film on silicon wafer by CSD |
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| Affiliation: | 1. Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan;2. Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan;3. Ceramics Research Laboratory, Nagoya Institute of Technology, 10-6-29 Asahigaoka, Tajimi, Gifu 507-0071, Japan;1. Physics Department, Faculty of Science, Beni-Sueif University, Beni-Sueif 6111, Egypt;2. Physics Department, Faculty of Science, Taibah University, PO Box 344, Madina, Saudi Arabia;1. Institut de Ciència de Materials de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia, Spain;2. Materials Research Institute and Materials Science and Engineering Department, The Pennsylvania State University, University Park, PA 16802, USA;3. Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia, Spain;1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China;2. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China;1. LIEC – Department of Chemistry, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo, Brazil;2. Department of Chemistry, Universidade Estadual Paulista – Unesp, P.O. Box 473, 17033-360 Bauru, São Paulo, Brazil;3. NanO LaB–Department of Physics, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo, Brazil;4. Institute of Chemistry, Universidade Estadual Paulista–Unesp, Araraquara, São Paulo, Brazil |
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| Abstract: | This paper describes the orientation control and the electrical properties of the chemical solution deposition (CSD) derived LaNiO3 (LNO) thin film. The LNO precursor solutions were prepared using lanthanum nitrate and nickel acetate as La and Ni source, and ethanol or 2-methoxyethanol and 2-aminoethanol mixed solution as solvents. The LNO films were spin-coated using these precursor solutions and annealed at the temperature from 500 to 700 °C. The resulting LNO film annealed at 700 °C derived from 2-methoxyethanol and 2-aminoethanol mixed solvent exhibited (1 0 0)-orientation, with some surface cracks and pores, and relatively higher resistivity of 2.49 × 10?3 Ω cm. The LNO film derived from 2-methoxyethanol and 2-aminoethanol mixed solvent annealed at 700 °C in an oxygen atmosphere showed highly (1 0 0)-orientation, with higher density, a few cracks and pores, and exhibited a good electrical resistivity of 7.27 × 10?4 Ω cm. |
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