Dielectric and thermal properties of AlN ceramics |
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| Affiliation: | 1. National Institute of Advanced Industrial Science and Technology (AIST), Advanced Manufacturing Research Institute, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan;2. Meijo University, Department of Transportation Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;1. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea;2. Functional Ceramics Laboratory, Department of Materials Science and Engineering, University of Seoul, Seoul 130-743, Republic of Korea;3. Sialon Group, Sialon Unit, National Institute for Materials Science, Tsukuba-shi 305-0044, Ibaraki, Japan;1. Fraunhofer Institut für keramische Technologien und Systeme, Winterbergstrasse 28, 01277 Dresden, Germany;2. Institut für Werkstoffwissenschaft, Technische Universität Bergakademie Freiberg, Gustav-Zeuner-Strasse 5, 09599 Freiberg, Germany;3. Institut für Angewandte Materialien am Karlsruher Institut für Technologie, 76344 Eggenstein-Leopoldshafen, Germany;1. The Institute of Nuclear Physics of Republic of Kazakhstan, Astana, Kazakhstan;2. Kazakh-Russian International University, Aktobe, Kazakhstan;3. L.N. Gumilyov Eurasian National University, Astana, Kazakhstan;4. Ural Federal University, Yekaterinburg, Russia;1. School of Materials Science & Engineering, Hubei Province Key Laboratory of Green Materials for Light Industry, Hubei University of Technology, 430068 Wuhan, PR China;2. State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China;1. College of Engineering\"Celso Daniel Engineer\", University Center St. Andrew Foundation, Av. Príncipe de Gales, 821, Santo André SP 09060-650, Brazil;2. Polytechnic School of the University of São Paulo, Av. Prof. Mello Moraes, 2463, São Paulo SP 05508-900, Brazil;3. Center for Engineering, Modeling and Applied Social Sciences, Federal University of ABC, Av. dos Estados, 5001, Santo André SP 09210-580, Brazil |
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| Abstract: | The effects of slow-cooling and annealing conditions on dielectric loss, thermal conductivity and microstructure of AlN ceramics were investigated. Y2O3 from 0.5 to 1.25 mol% at 0.25% increments was added as a sintering additive to AlN powder and pressureless sintering was carried out at 1900 °C for 2 h in a nitrogen flowing atmosphere. To improve the properties, AlN samples were slow-cooled at a rate of 1 °C min?1 from 1900 to 1750 °C, subsequently cooled to 970 °C at a rate of 10 °C min?1 and then annealed at the same temperature for 4 h. AlN and YAG (5Al2O3/3Y2O3) were the only identified phases from XRD. AlN doped with 0.5 and 0.75 mol% Y2O3 had a low loss of <2.0 × 10?3 and a high thermal conductivity of >160 W m?1 °C?1. |
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