Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with ZnO–B2O3 glass additions for LTCC applications |
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| Affiliation: | 1. School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul, 151-744, Republic of Korea;2. Materials Science & Engineering Division, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;1. School of Civil, Environmental and Architectural Engineering, Korea University, Seoul 136-713, Republic of Korea;2. High-Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;1. School of Civil, Environmental and Architectural Engineering, Korea University, Seoul 136-713, South Korea;2. Center of Excellence for Research in Engineering Materials, Advanced Manufacturing Institute, King Saud University, Riyadh 11421, Saudi Arabia;3. Department of Materials Science and Engineering & Energy Systems Research, Ajou University, Suwon 443-749, South Korea;1. School of Civil, Environmental and Architectural Engineering, Korea University, 145, Anam-Ro, Seongbuk-Gu, Seoul 136-713, South Korea;2. Advanced Materials & Processing Center, Institute for Advanced Engineering, Yongin 449-863, South Korea |
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| Abstract: | The effects of ZnB2O4 glass additions on the sintering temperature and microwave dielectric properties of Ba3Ti5Nb6O28 have been investigated using dilatometer, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and a network analyzer. The pure Ba3Ti5Nb6O28 system showed a high sintering temperature (1250 °C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ?r of 37.0, τf of ?12 ppm/°C. It was found that the addition of ZnB2O4 glass to Ba3Ti5Nb6O28 lowered the sintering temperature from 1250 to 925 °C. The reduced sintering temperature was attributed to the formation of ZnB2O4 liquid phase and B2O3-rich liquid phases. Also the addition of ZnB2O4 glass enhanced the microwave dielectric properties: Q × f of 19,100 GHz, ?r of 36.6, τf of 5 ppm/°C. From XPS and XRD studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties. |
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