Microstructural evolution and dielectric properties of SiO2-doped CaCu3Ti4O12 ceramics |
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| Affiliation: | 1. Department of Materials Science and Engineering, Korea University, 1, 5-ka, Anam-dong, Sungbuk-ku, Seoul 136-701, South Korea;2. School of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea;1. Key Laboratory of Engineering Dielectrics and its Application, Ministry of Education, College of Electrical & Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, PR China;2. School of Applied Science, Harbin University of Science and Technology, Harbin 150080, PR China;3. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, PR China;1. School of Science, Xi’an Polytechnic University, Xi’an 710048, China;2. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China;1. GREMAN, UMR 7341 CNRS, Université François Rabelais, UFR Sciences et Techniques, Parc de Grandmont, 37200 Tours, France;2. SRT Microcéramique, Rue Mons, 41100 Vendôme, France;1. Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University, Khon Kaen, 40002 Thailand;2. Integrated Nanotechnology Research Center (INRC), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002 Thailand;3. National Metal and Materials Technology Center, National Science and Technology Development Agency, Thailand Science Park, Pathumthani, 12120 Thailand;4. Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima, 30000 Thailand;5. Institute of Science, School of Physics, Suranaree University, of Technology, Nakhon Ratchasima, 30000 Thailand;1. Department of Chemical and Materials Engineering, The University of Auckland, PB 92019, Auckland 1142, New Zealand;2. School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083, China;3. School of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China |
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| Abstract: | The abnormal grain growth (AGG) behavior of undoped and SiO2-doped CaCu3Ti4O12 (CCTO) ceramics were investigated. With the addition of 2 wt.% SiO2, the AGG-triggering temperature decreased from 1100 to 1060 °C, and the temperature for obtaining a uniform and coarse microstructure decreased from 1140 to 1100 °C. The lowering of the AGG temperature by SiO2 addition was attributed to the formation of a CuO-SiO2-rich intergranular phase at lower temperature. The apparent dielectric permittivity of coarse SiO2-doped CCTO ceramics was ～10 times higher than that of fine SiO2-doped CCTO ceramics at the frequency of 103–105 Hz. The doping of SiO2 to CCTO ceramics provides an efficient route of improving the dielectric properties via grain coarsening. The correlation between the microstructure and apparent permittivity suggests the presence of a barrier layer near the grain boundary. |
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