Nonlinear I–V electrical behaviour of doped CaCu3Ti4O12 ceramics |
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| Affiliation: | 1. Electroceramic Department, Instituto de Cerámica y Vidrio, CSIC, C/Kelsen 5, 28049 Madrid, Spain;2. ETSIT-UPM, Ciudad Universitaria, 28040 Madrid, Spain;3. INAEL, S.A. Pol. Industrial del Jarama s.n., 45007 Toledo, Spain;1. Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, PR China;2. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, PR China;3. College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, PR China;1. Key Laboratory of Engineering Dielectrics and its Application, Ministry of Education, College of Electrical & Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, PR China;2. School of Applied Science, Harbin University of Science and Technology, Harbin 150080, PR China;3. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, PR China;1. Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University, Khon Kaen, 40002 Thailand;2. Integrated Nanotechnology Research Center (INRC), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002 Thailand;3. National Metal and Materials Technology Center, National Science and Technology Development Agency, Thailand Science Park, Pathumthani, 12120 Thailand;4. Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima, 30000 Thailand;5. Institute of Science, School of Physics, Suranaree University, of Technology, Nakhon Ratchasima, 30000 Thailand;1. Research Group Materials, Microelectronics, Acoustics, Nanotechnologies (GREMAN) UMR 7341 Université de Tours/CNRS, Faculty of Sciences and Techniques, Parc de Grandmont, 37200, Tours, France;2. SRT Microcéramique, Rue Mons, 41100, Vendôme, France;1. Physical Chemistry Department, Chemistry Institute, São Paulo State University (UNESP), Araraquara, São Paulo, Brazil;2. Advanced Materials Department, Jozef Stefan Institute, Ljubljana, Slovenia |
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| Abstract: | In this work a comparative study of undoped CaCu3Ti4O12 (CCTO) and doped with Fe3+(CCTOF) and Nb5+(CCTON) ceramics, was aimed to modify the electronic transport. XRD patterns, FE-SEM microstructural analysis, impedance spectroscopy and I–V response curves were afforded to correlate the microstructure with the nonlinear I–V behaviour. The appearance of nonlinear behaviour in doped CCTO samples has been correlated with the ceramic microstructure that consists in n-type semiconductor grains, surrounded by a grain boundary phase based on CuO. The presence of this secondary grain boundary phase is the responsible of the assisted liquid phase sintering in CCTO ceramics. Doped samples showed cleaner grain boundaries than CCTO and nonlinearity in the I–V response. |
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