MEMS-based humidity sensor with integrated temperature compensation mechanism

This study applies conventional micro-electro-mechanical systems (MEMS) techniques to develop a novel low-cost humidity sensor comprising a silicon substrate, a freestanding cantilever and an integrated resistive thermal sensor. The cantilever has a composite structure comprising a thin layer of platinum (Pt) deposited on a silicon nitride layer and then covered with a polyimide sensing layer. The cantilever deflected in the upward direction as water molecules absorbed by the polyimide sensing layer. The humidity sensor chip caused a measurable change in the resistance of the platinum layer. By compensating the change in the measured resistance by the ambient temperature, the absolute value of the relative humidity can be directly derived. The experimental results show that the sensor has a time-response of 0.9 s when exposed to a sudden humidity change of 65%RH to 95%RH. The sensitivity of the sensors decreases as the temperature increases. Furthermore, the sensor with the longest Pt resistor has the greatest sensitivity. In additions, the temperature-calibrated resistance signal generated by the sensor varies linearly with the ambient humidity.