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Field emission enhancement of amorphous carbon films by nitrogen-implantation |
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| Authors: | Junjie Li Weitao Zheng Zengsun Jin Xianxiu Mei Chuang Dong |
| Affiliation: | a State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, PR China b Department of Materials Science, State Key Laboratory of Superhard Materials, Jilin University, Changchun 130023, PR China c State Key Laboratory of Materials Surface Modification by Laser, Ion, and Electron, Dalian University of Technology, Dalian 116024, PR China d School of Electrical and Electronic Engineering, Nanyang Technology University, Nanyang Avenue, Singapore 639798, Singapore |
| Abstract: | Effect of nitrogen-implantation on electron field emission properties of amorphous carbon films has been examined. Raman and X-ray photoelectron spectroscopy measurements reveal different types of C-N bonds formed upon nitrogen-implantation. The threshold field is lowered from 14 to 4 V/μm with increasing the dose of implantation from 0 to 5 × 1017 cm−2 and the corresponding effective work function is estimated to be in the range of 0.01-0.1 eV. From the perspective of tetrahedron bond formation, a mechanism for the nitrogen-lowered work function is proposed, suggesting that both the nitrogen nonbonding (lone pair) and the lone-pair-induced carbon antiboding (dipole) states are responsible for lowering the work function and hence the threshold field. |
| Keywords: | A. Carbon films B. Implantation C. Raman spectroscopy, X-ray photoelectron spectroscopy D. Field emission |
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