Study onNitridation-Induced Residual Stressnear Si/SiO2 Interface in n-MOSFETs

Residual mechanical stresses near the Si/SiO₂interface in n-MOSFETs induced by different nitridation processings are investigated bymeans of Ar⁺ backsurface bombardment.The results show that the NH₃nitridation and the N₂O growth result in larger residual stress,with the formerfrom higher interfacial nitrogen incorporation and the later from its initial acceleratedgrowth phase.However,the residual stress is negligible for N₂O nitridedoxide,indicating that fresh N₂O-nitrided oxide itself has excellent interfacialand bulk properties.