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Bulk-material device with current-controlled negative resistance |
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| Authors: | Rees H.D. |
| Affiliation: | Royal Radar Establishment, Malvern, UK; |
| Abstract: | Current-controlled negative resistance following avalanche breakdown is shown by structures of bulk ptype InSb up to 150°K and of ptype In(As, P) up to 300°K. The high speed of the InSb devices suggests applications as microwave sources or switches. |
| Keywords: | |