Rapid isothermal processing for fabrication of GaAs-basedelectronic devices [HBTs] |
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Authors: | Pearton S.J. Ren F. Katz A. Fullowan T.R. Abernathy C.R. Hobson W.S. Kopf R.F. |
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Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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Abstract: | The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (fT=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing |
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