Soldering reactions between In49Sn and Ag thick films |
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| Authors: | M D Cheng S S Wang T H Chuang |
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| Affiliation: | (1) Department of Materials Science and Engineering, National Taiwan University, 106 Taipei, Taiwan |
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| Abstract: | The interfacial reactions between In49Sn solders and Ag thick films at temperatures ranging from 200°C to 350°C have been
studied. The intermetallic compound formed at the Ag/In49Sn interface is Ag2In enveloped in a thin layer of AgIn2. Through the measurement of the thickness decrease of Ag thick films, it has been determined that the reaction kinetics of
Ag2In has a linear relation to reaction time. Morphology observations indicated that the linear reaction of Ag2In was caused by the floating of Ag2In into the In49Sn solder as a result of the In49Sn solder penetrating into the porous Ag thick film. A sound joint can be
obtained when a sufficient thickness of the Ag thick film (over 19.5 μm) reacts with the In49Sn solder. In this case, the
tensile tested specimens fracture in the In49Sn matrix. |
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| Keywords: | In49Sn solders Ag thick films intermetallic compounds bonding strengths |
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