Fabrication, RE performance, and yield of a combined limitingamplifier and dual-modulus prescalar GaAs IC chip |
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| Authors: | Geissberger A.E. Sadler R.A. Singh H.P. Lewis F.K. Bahl I.J. Balzan M.L. Griffin E.L. Drinkwine M.J. |
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| Affiliation: | ITT Corp., Roanoke, VA; |
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| Abstract: | Production technology details, RF performance, and yield results for an ECL-compatible, L-band, limiting dual-modulus (÷10/11) prescalar are presented. Monolithic integration of analog and digital circuit functions is achieved using refractory self-aligned-gate FET technology. When tested with -22-dBm input signal power, one lot of six wafers had a total RF chip yield of 19% with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (SD=51 MHz) with an average power dissipation of 696 mW (SD=23 mW) |
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