h-BN掺杂对金刚石晶体结构的影响 |
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引用本文: | 李沛航,崔梦男,万玉春. h-BN掺杂对金刚石晶体结构的影响[J]. 长春理工大学学报(自然科学版), 2015, 0(5): 72-75. DOI: 10.3969/j.issn.1672-9870.2015.05.016 |
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作者姓名: | 李沛航 崔梦男 万玉春 |
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作者单位: | 长春理工大学 材料科学与工程学院,长春,130022 |
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摘 要: | 报道了在Fe70Ni30合金触媒和石墨系体中,掺杂六角立方氮化硼(h-BN)和硼(B)生长金刚石单晶的过程。研究发现,h-BN和B掺杂对于金刚石生长条件及形貌等具有较大的影响,其中h-BN掺杂生长金刚石的最低生长压力达到了6.2 GPa,同时晶体呈绿色条状。说明h-BN和B在金刚石晶体生长以及取代碳原子进入晶格时起到了不同的作用。通过X射线衍射及光电子能谱等表征手段,分析了硼氮对金刚石晶体结构的影响,以及硼氮在金刚石中的化学环境及成键方式。在此基础上阐述了硼氮掺杂的形成机制。
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关 键 词: | h-BN 金刚石 成键方式 高温高压 |
The Effect of h-BN Additive on the Structure of Diamond Crystal |
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Abstract: | In this work, we report the growth process of single crystal diamond by doping boron (B) and hexagonal boron nitride (h-BN) in the system of Fe70Ni30 alloy catalyst and graphite. The doping of B and h-BN has signifi-cant effect on the growth condition and morphology of diamonds. The lowest growth pressure of h-BN doped diamond is 6.2Gpa and the crystals have a green strip morphology. This results indicates that B and h-BN have different effects on the diamond growth and have different ways to replace carbon atoms. We analyze the effect of doping B and N at-oms on the structure of diamond,and the chemical environment of B and N atoms in diamond by using X-ray diffrac-tion and photoelectron spectroscopy. The mechanism of B and N doped diamond is also demonstrated. |
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Keywords: | h-BN diamond bonding way high temperature and high pressure |
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