InP/InGaAs heterojunction bipolar transistors grown by gas-sourcemolecular beam epitaxy with carbon-doped base |
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Authors: | Gee RC Chin T-P Tu CW Asbeck PM Lin CL Kirchner PD Woodall JM |
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Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., La Jolla, CA; |
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Abstract: | The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBTs) with p-type carbon doping in InGaAs are reported. P-type carbon doping in the InGaAs base has been achieved by gas-source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl4) as the dopant source. The resulting hole concentration in the base was 1×1019 cm-3. HBTs fabricated using material from this growth method display good I-V characteristics with DC current gain above 500. This verifies the ability to use carbon doping to make a heavily p-type InGaAs base of an N-p-n HBT |
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